標題: Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell
作者: Simanjuntak, Firman Mangasa
Chandrasekaran, Sridhar
Pattanayak, Bhaskar
Lin, Chun-Chieh
Tseng, Tseung-Yuen
資訊工程學系
電子工程學系及電子研究所
Department of Computer Science
Department of Electronics Engineering and Institute of Electronics
關鍵字: resistive switching;electrochemical metallization devices;zinc peroxide;RRAM
公開日期: 20-Sep-2017
摘要: We explore the use of cubic-zinc peroxide (ZnO2) as a switching material for electrochemical metallization memory (ECM) cell. The ZnO2 was synthesized with a simple peroxide surface treatment. Devices made without surface treatment exhibits a high leakage current due to the self-doped nature of the hexagonal-ZnO material. Thus, its switching behavior can only be observed when a very high current compliance is employed. The synthetic ZnO2 layer provides a sufficient resistivity to the Cu/ZnO2/ZnO/ITO devices. The high resistivity of ZnO2 encourages the formation of a conducting bridge to activate the switching behavior at a lower operation current. Volatile and non-volatile switching behaviors with sufficient endurance and an adequate memory window are observed in the surface-treated devices. The room temperature retention of more than 10(4) s confirms the non-volatility behavior of the devices. In addition, our proposed device structure is able to work at a lower operation current among other reported ZnO-based ECM cells.
URI: http://dx.doi.org/10.1088/1361-6528/aa80b4
http://hdl.handle.net/11536/145988
ISSN: 0957-4484
DOI: 10.1088/1361-6528/aa80b4
期刊: NANOTECHNOLOGY
Volume: 28
Appears in Collections:Articles