完整後設資料紀錄
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dc.contributor.authorSimanjuntak, Firman Mangasaen_US
dc.contributor.authorChandrasekaran, Sridharen_US
dc.contributor.authorPattanayak, Bhaskaren_US
dc.contributor.authorLin, Chun-Chiehen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2018-08-21T05:54:28Z-
dc.date.available2018-08-21T05:54:28Z-
dc.date.issued2017-09-20en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://dx.doi.org/10.1088/1361-6528/aa80b4en_US
dc.identifier.urihttp://hdl.handle.net/11536/145988-
dc.description.abstractWe explore the use of cubic-zinc peroxide (ZnO2) as a switching material for electrochemical metallization memory (ECM) cell. The ZnO2 was synthesized with a simple peroxide surface treatment. Devices made without surface treatment exhibits a high leakage current due to the self-doped nature of the hexagonal-ZnO material. Thus, its switching behavior can only be observed when a very high current compliance is employed. The synthetic ZnO2 layer provides a sufficient resistivity to the Cu/ZnO2/ZnO/ITO devices. The high resistivity of ZnO2 encourages the formation of a conducting bridge to activate the switching behavior at a lower operation current. Volatile and non-volatile switching behaviors with sufficient endurance and an adequate memory window are observed in the surface-treated devices. The room temperature retention of more than 10(4) s confirms the non-volatility behavior of the devices. In addition, our proposed device structure is able to work at a lower operation current among other reported ZnO-based ECM cells.en_US
dc.language.isoen_USen_US
dc.subjectresistive switchingen_US
dc.subjectelectrochemical metallization devicesen_US
dc.subjectzinc peroxideen_US
dc.subjectRRAMen_US
dc.titlePeroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cellen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/1361-6528/aa80b4en_US
dc.identifier.journalNANOTECHNOLOGYen_US
dc.citation.volume28en_US
dc.contributor.department資訊工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Computer Scienceen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000408693000002en_US
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