標題: | Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell |
作者: | Simanjuntak, Firman Mangasa Chandrasekaran, Sridhar Lin, Chun-Chieh Tseng, Tseung-Yuen 電子工程學系及電子研究所 電機工程學系 Department of Electronics Engineering and Institute of Electronics Department of Electrical and Computer Engineering |
關鍵字: | Resistive switching;Programmable metallization devices;Zinc peroxide;PMC |
公開日期: | 19-十月-2018 |
摘要: | The impact of peroxide surface treatment on the resistive switching characteristics of zinc peroxide (ZnO2)-based programmable metallization cell (PMC) devices is investigated. The peroxide treatment results in a ZnO hexagonal to ZnO2 cubic phase transformation; however, an excessive treatment results in crystalline decomposition. The chemically synthesized ZnO2 promotes the occurrence of switching behavior in Cu/ZnO2/ZnO/ITO with much lower operation current as compared to the Cu/ZnO/ITO (control device). However, the switching stability degrades as performing the peroxide treatment for a longer time. We suggest that the microstructure of the ZnO2 is responsible for this degradation behavior and fine tuning on ZnO2 properties, which is necessary to achieve proper switching characteristics in ZnO2-based PMC devices. |
URI: | http://dx.doi.org/10.1186/s11671-018-2743-7 http://hdl.handle.net/11536/148337 |
ISSN: | 1556-276X |
DOI: | 10.1186/s11671-018-2743-7 |
期刊: | NANOSCALE RESEARCH LETTERS |
Volume: | 13 |
顯示於類別: | 期刊論文 |