標題: | Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell |
作者: | Simanjuntak, Firman Mangasa Chandrasekaran, Sridhar Pattanayak, Bhaskar Lin, Chun-Chieh Tseng, Tseung-Yuen 資訊工程學系 電子工程學系及電子研究所 Department of Computer Science Department of Electronics Engineering and Institute of Electronics |
關鍵字: | resistive switching;electrochemical metallization devices;zinc peroxide;RRAM |
公開日期: | 20-九月-2017 |
摘要: | We explore the use of cubic-zinc peroxide (ZnO2) as a switching material for electrochemical metallization memory (ECM) cell. The ZnO2 was synthesized with a simple peroxide surface treatment. Devices made without surface treatment exhibits a high leakage current due to the self-doped nature of the hexagonal-ZnO material. Thus, its switching behavior can only be observed when a very high current compliance is employed. The synthetic ZnO2 layer provides a sufficient resistivity to the Cu/ZnO2/ZnO/ITO devices. The high resistivity of ZnO2 encourages the formation of a conducting bridge to activate the switching behavior at a lower operation current. Volatile and non-volatile switching behaviors with sufficient endurance and an adequate memory window are observed in the surface-treated devices. The room temperature retention of more than 10(4) s confirms the non-volatility behavior of the devices. In addition, our proposed device structure is able to work at a lower operation current among other reported ZnO-based ECM cells. |
URI: | http://dx.doi.org/10.1088/1361-6528/aa80b4 http://hdl.handle.net/11536/145988 |
ISSN: | 0957-4484 |
DOI: | 10.1088/1361-6528/aa80b4 |
期刊: | NANOTECHNOLOGY |
Volume: | 28 |
顯示於類別: | 期刊論文 |