標題: AC stress and electronic effects on SET switching of HfO2 RRAM
作者: Liu, Jen-Chieh
Magyari-Kope, Blanka
Qin, Shengjun
Zheng, Xin
Wong, H. -S. Philip
Hou, Tuo-Hung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 28-Aug-2017
摘要: An AC stress test was performed to investigate the accompanying electronic effects in a HfO2 resistive random access memory during the SET transition, which featured a sudden decrease in resistance. Comparing the DC and AC measurement results indicated the pronounced influence of interrupted stress on both the mean values and variations of time to SET. First-principles calculations suggested that the charge states (+2, +1, or neutral) of oxygen vacancies affect the migration barrier for forming oxygen vacancy clusters. Therefore, a charge-state-dependent SET model is proposed to include the additional electronic effects induced by the dynamics of electron trapping and detrapping in oxygen vacancies during AC stress. A trimodal Weibull fitting based on the proposed model reproduced the experimental time to SET distributions obtained in a wide range of AC stress conditions. Published by AIP Publishing.
URI: http://dx.doi.org/10.1063/1.4991576
http://hdl.handle.net/11536/145995
ISSN: 0003-6951
DOI: 10.1063/1.4991576
期刊: APPLIED PHYSICS LETTERS
Volume: 111
Appears in Collections:Articles