完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLiu, Jen-Chiehen_US
dc.contributor.authorMagyari-Kope, Blankaen_US
dc.contributor.authorQin, Shengjunen_US
dc.contributor.authorZheng, Xinen_US
dc.contributor.authorWong, H. -S. Philipen_US
dc.contributor.authorHou, Tuo-Hungen_US
dc.date.accessioned2018-08-21T05:54:28Z-
dc.date.available2018-08-21T05:54:28Z-
dc.date.issued2017-08-28en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4991576en_US
dc.identifier.urihttp://hdl.handle.net/11536/145995-
dc.description.abstractAn AC stress test was performed to investigate the accompanying electronic effects in a HfO2 resistive random access memory during the SET transition, which featured a sudden decrease in resistance. Comparing the DC and AC measurement results indicated the pronounced influence of interrupted stress on both the mean values and variations of time to SET. First-principles calculations suggested that the charge states (+2, +1, or neutral) of oxygen vacancies affect the migration barrier for forming oxygen vacancy clusters. Therefore, a charge-state-dependent SET model is proposed to include the additional electronic effects induced by the dynamics of electron trapping and detrapping in oxygen vacancies during AC stress. A trimodal Weibull fitting based on the proposed model reproduced the experimental time to SET distributions obtained in a wide range of AC stress conditions. Published by AIP Publishing.en_US
dc.language.isoen_USen_US
dc.titleAC stress and electronic effects on SET switching of HfO2 RRAMen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4991576en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume111en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000408751500034en_US
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