完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Huang, Jyun-Hong | en_US |
dc.contributor.author | Deng, Kuang-Ying | en_US |
dc.contributor.author | Liu, Pang-Shiuan | en_US |
dc.contributor.author | Wu, Chien-Ting | en_US |
dc.contributor.author | Chou, Cheng-Tung | en_US |
dc.contributor.author | Chang, Wen-Hao | en_US |
dc.contributor.author | Lee, Yao-Jen | en_US |
dc.contributor.author | Hou, Tuo-Hung | en_US |
dc.date.accessioned | 2018-08-21T05:54:30Z | - |
dc.date.available | 2018-08-21T05:54:30Z | - |
dc.date.issued | 2017-09-08 | en_US |
dc.identifier.issn | 2196-7350 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1002/admi.201700157 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/146047 | - |
dc.description.abstract | Molybdenum ditelluride (MoTe2) has attracted considerable interest for nanoelectronic, optoelectronic, spintronic, and valleytronic applications because of its modest band gap, high field-effect mobility, large spin-orbit-coupling splitting, and tunable 1T/2H phases. However, synthesizing large-area, high-quality MoTe2 remains challenging. The complicated design of gas-phase reactant transport and reaction for chemical vapor deposition or tellurization is nontrivial because of the weak bonding energy between Mo and Te. This study reports a new method for depositing MoTe2 that entails using physical vapor deposition followed by a postannealing process in a Te-free atmosphere. Both Mo and Te are physically deposited onto the substrate by sputtering a MoTe2 target. A composite SiO2 capping layer is designed to prevent Te sublimation during the postannealing process. The postannealing process facilitates 1T-to-2H phase transition and solid-phase crystallization, leading to the formation of high-crystallinity few-layer 2H-MoTe2 with a field-effect mobility of approximate to 10 cm(2) V-1 s(-1), the highest among all nonexfoliated 2H-MoTe2 currently reported. Furthermore, 2H-MoS2 and Td-WTe2 can be deposited using similar methods. Requiring no transfer or chemical reaction of metal and chalcogen reactants in the gas phase, the proposed method is potentially a general yet simple approach for depositing a wide variety of large-area, high-quality, 2D layered structures. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | molybdenum ditelluride (MoTe2) | en_US |
dc.subject | phase transition | en_US |
dc.subject | physical vapor deposition | en_US |
dc.subject | solid-phase crystallization | en_US |
dc.subject | transition-metal dichalcogenides (TMDs) | en_US |
dc.title | Large-Area 2D Layered MoTe2 by Physical Vapor Deposition and Solid-Phase Crystallization in a Tellurium-Free Atmosphere | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1002/admi.201700157 | en_US |
dc.identifier.journal | ADVANCED MATERIALS INTERFACES | en_US |
dc.citation.volume | 4 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000409896500021 | en_US |
顯示於類別: | 期刊論文 |