標題: | Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits |
作者: | Lin, Yen-Fu Xu, Yong Wang, Sheng-Tsung Li, Song-Lin Yamamoto, Mahito Aparecido-Ferreira, Alex Li, Wenwu Sun, Huabin Nakaharai, Shu Jian, Wen-Bin Ueno, Keiji Tsukagoshi, Kazuhito 電子物理學系 Department of Electrophysics |
公開日期: | 28-五月-2014 |
摘要: | We report ambipolar charge transport in a-molybdenum ditelluride (MoTe2) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe2 contacts. The Schottky barrier heights as well as the current on/off ratio could be modified by modulating the electrostatic fields of the back-gate voltage (V-bg) and drain-source voltage (V-ds). Using these ambipolar MoTe2 transistors we fabricated complementary inverters and amplifiers, demonstrating their feasibility for future digital and analog circuit applications. |
URI: | http://dx.doi.org/10.1002/adma.201305845 http://hdl.handle.net/11536/24707 |
ISSN: | 0935-9648 |
DOI: | 10.1002/adma.201305845 |
期刊: | ADVANCED MATERIALS |
Volume: | 26 |
Issue: | 20 |
起始頁: | 3263 |
結束頁: | + |
顯示於類別: | 期刊論文 |