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dc.contributor.authorShellaiah, Muthaiahen_US
dc.contributor.authorChen, Tin Haoen_US
dc.contributor.authorSimon, Turibiusen_US
dc.contributor.authorLi, Liang-Chenen_US
dc.contributor.authorSun, Kien Wenen_US
dc.contributor.authorKo, Fu-Hsiangen_US
dc.date.accessioned2019-04-03T06:43:40Z-
dc.date.available2019-04-03T06:43:40Z-
dc.date.issued2017-09-11en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://dx.doi.org/10.1038/s41598-017-11741-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/146049-
dc.description.abstractWe report an affordable wet chemical route for the reproducible hybrid graphite-diamond nanowires (G-DNWs) growth from cysteamine functionalized diamond nanoparticles (ND-Cys) via pH induced self-assembly, which has been visualized through SEM and TEM images. Interestingly, the mechanistic aspects behind that self-assembly directed G-DNWs formation was discussed in details. Notably, above self-assembly was validated by AFM and TEM data. Further interrogations by XRD and Raman data were revealed the possible graphite sheath wrapping over DNWs. Moreover, the HR-TEM studies also verified the coexistence of less perfect sp(2) graphite layer wrapped over the sp3 diamond carbon and the impurity channels as well. Very importantly, conductivity of hybrid G-DNWs was verified via fabrication of a single G-DNW. Wherein, the better conductivity of G-DNW portion L2 was found as 2.4 +/- 1.92 x 10(-6) mS/cm and revealed its effective applicability in near future. In addition to note, temperature dependent carrier transport mechanisms and activation energy calculations were reported in details in this work. Ultimately, to demonstrate the importance of our conductivity measurements, the possible mechanism behind the electrical transport and the comparative account on electrical resistivities of carbon based materials were provided.en_US
dc.language.isoen_USen_US
dc.titleAn Affordable Wet Chemical Route to Grow Conducting Hybrid Graphite-Diamond Nanowires: Demonstration by A Single Nanowire Deviceen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/s41598-017-11741-9en_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.citation.volume7en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department應用化學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department奈米科技中心zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentCenter for Nanoscience and Technologyen_US
dc.identifier.wosnumberWOS:000410064000079en_US
dc.citation.woscount4en_US
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