標題: Asymmetric Characteristic Fluctuation of Undoped Gate-All-Around Nanowire MOSFETs Induced by Random Discrete Dopants inside Source/Drain Extensions
作者: Sung, Wen-Li
Li, Yiming
資訊工程學系
電機工程學系
電信工程研究所
Department of Computer Science
Department of Electrical and Computer Engineering
Institute of Communications Engineering
公開日期: 1-Jan-2017
摘要: We perform experimentally validated statistical device simulation to explore characteristic fluctuation induced by random discrete dopants (RDDs) inside the source / drain extensions of undoped gate-all-around silicon nanowire MOSFETs. The engineering findings of this study indicate that both the DC and dynamic characteristic fluctuation caused by RDDs of the drain extension has relatively smaller variability than that caused by RDDs of the source extension. It could be attributed to the effect of random position of RDDs appearing in the source / drain extensions. Compared to RDDs of the source extension, fluctuations of voltage gain and cut-off frequency of the explored gate-all-around silicon nanowire MOSFET circuit induced by RDDs of the drain extension can be significantly reduced from 24.3% and 20.7% to 0.9% and 2.2%, respectively.
URI: http://hdl.handle.net/11536/146176
ISSN: 1944-9399
期刊: 2017 IEEE 17TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)
起始頁: 101
結束頁: 104
Appears in Collections:Conferences Paper