標題: Design and Simulation of Si/SiC Quantum Dot Superlattice Solar Cells with Al2O3 Passivation Layer
作者: Tsai, Yi-Chia
Lee, Ming-Yi
Li, Yiming
Samukawa, Seiji
電信工程研究所
Institute of Communications Engineering
關鍵字: Minibands;Density of States;Superlattice;Si/SiC Quantum dot;Solar cell;Layer distance;Conversion efficiency;Multilayer
公開日期: 1-一月-2017
摘要: By simultaneously considering the enhancement of quantum confinement on the effective bandgap and minimum transition energy, the silicon (Si)! silicon carbide (SiC) quantum dot superlattice (SiC-QDSL) with aluminum oxide (A1203-QDSL) passivation layer shows the high short-circuit current (J,) of 4.77 mA/cm(2) in theoretical, which agrees with the J, of 4.75 mA/cm(2) obtained in the experiment under an AM1.5 and one sun illumination. Moreover, the reduction of efficiency in an ultra-dense QD configuration can be ameliorated by exploiting the Al2O3 passivation layer. As the result, a high conversion efficiency of 16.3% is optimized by using the QD geometry from experiment and an inter-dot spacing of 0.3 nm.
URI: http://hdl.handle.net/11536/146177
ISSN: 1944-9399
期刊: 2017 IEEE 17TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)
起始頁: 341
結束頁: 344
顯示於類別:會議論文