標題: Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy
作者: Zhuravlev, K. S.
Gulyaev, D. V.
Aleksandrov, I. A.
Malin, T. V.
Mansurov, V. G.
Galitsyn, Yu G.
Konfederatova, K. A.
Chen, Yen-Chun
Chang, Wen-Hao
電子物理學系
Department of Electrophysics
公開日期: 1-一月-2017
摘要: We report original method of formation Ga(In)N/AlN quantum dots with low density by ammonia MBE on the (0001)AlN surface by using a decomposition process of Ga(In)N thin layer. Low density of quantum dots have been obtained in the range 10(7)-10(9) cm(-2). Single quantum dots photoluminescence lines corresponding to exciton and biexciton transitions were observed in micro-photoluminescence spectra.
URI: http://dx.doi.org/10.1088/1742-6596/864/1/012007
http://hdl.handle.net/11536/146240
ISSN: 1742-6588
DOI: 10.1088/1742-6596/864/1/012007
期刊: 33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS
Volume: 864
起始頁: 0
結束頁: 0
顯示於類別:會議論文


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