標題: | Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy |
作者: | Zhuravlev, K. S. Gulyaev, D. V. Aleksandrov, I. A. Malin, T. V. Mansurov, V. G. Galitsyn, Yu G. Konfederatova, K. A. Chen, Yen-Chun Chang, Wen-Hao 電子物理學系 Department of Electrophysics |
公開日期: | 1-一月-2017 |
摘要: | We report original method of formation Ga(In)N/AlN quantum dots with low density by ammonia MBE on the (0001)AlN surface by using a decomposition process of Ga(In)N thin layer. Low density of quantum dots have been obtained in the range 10(7)-10(9) cm(-2). Single quantum dots photoluminescence lines corresponding to exciton and biexciton transitions were observed in micro-photoluminescence spectra. |
URI: | http://dx.doi.org/10.1088/1742-6596/864/1/012007 http://hdl.handle.net/11536/146240 |
ISSN: | 1742-6588 |
DOI: | 10.1088/1742-6596/864/1/012007 |
期刊: | 33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS |
Volume: | 864 |
起始頁: | 0 |
結束頁: | 0 |
顯示於類別: | 會議論文 |