Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy

標題:	Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy
作者:	Zhuravlev, K. S. Gulyaev, D. V. Aleksandrov, I. A. Malin, T. V. Mansurov, V. G. Galitsyn, Yu G. Konfederatova, K. A. Chen, Yen-Chun Chang, Wen-Hao 電子物理學系 Department of Electrophysics
公開日期:	1-Jan-2017
摘要:	We report original method of formation Ga(In)N/AlN quantum dots with low density by ammonia MBE on the (0001)AlN surface by using a decomposition process of Ga(In)N thin layer. Low density of quantum dots have been obtained in the range 10(7)-10(9) cm(-2). Single quantum dots photoluminescence lines corresponding to exciton and biexciton transitions were observed in micro-photoluminescence spectra.
URI:	http://dx.doi.org/10.1088/1742-6596/864/1/012007 http://hdl.handle.net/11536/146240
ISSN:	1742-6588
DOI:	10.1088/1742-6596/864/1/012007
期刊:	33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS
Volume:	864
起始頁:	0
結束頁:	0
Appears in Collections:	Conferences Paper

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