標題: Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS Capacitors
作者: Kanda, T.
Zade, D.
Lin, Y. -C.
Kakushima, K.
Ahmet, P.
Tsutsui, K.
Nishiyama, A.
Sugii, N.
Chang, E. Y.
Natori, K.
Hattori, T.
Iwai, H.
交大名義發表
National Chiao Tung University
公開日期: 1-Jan-2011
摘要: The electrical characteristics of InGaAs MOS capacitors with 8-nm-thick La2O3 gate dielectrics have been measured. The effects of annealing temperature and annealing time on the interface state densities (D-it) have been extracted. It has been found that the low Dit can be achieved by lowering the annealing temperature for an extended period of time.
URI: http://dx.doi.org/10.1149/1.3567624
http://hdl.handle.net/11536/146316
ISSN: 1938-5862
DOI: 10.1149/1.3567624
期刊: CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011)
Volume: 34
起始頁: 483
結束頁: 487
Appears in Collections:Conferences Paper