Spin Bottleneck in Resonance Tunneling through In0.04Ga0.96As/GaAs Vertical Double Quantum Dots

doi:10.1063/1.3666587

標題:	Spin Bottleneck in Resonance Tunneling through In0.04Ga0.96As/GaAs Vertical Double Quantum Dots
作者:	Huang, S. M. Tokura, Y. Akimoto, H. Kono, K. Lin, J. J. Tarucha, S. Ono, K. 物理研究所 Institute of Physics
關鍵字:	quantum dot;single electron tunneling;spin transport
公開日期:	1-Jan-2011
摘要:	We study the electron resonance tunneling through double quantum dots with different g factors. We found that the resonance tunneling current is suppressed even if one of the Zeeman sublevels is aligned. The level broadening effect partially releases the blockade. The current maximum peak appears when the interdot detune is half of Zeeman energy difference of two quantum dots.
URI:	http://dx.doi.org/10.1063/1.3666587 http://hdl.handle.net/11536/146320
ISSN:	0094-243X
DOI:	10.1063/1.3666587
期刊:	PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS
Volume:	1399
Appears in Collections:	Conferences Paper