標題: | Threshold Vacuum Switch (TVS) on 3D-Stackable and 4F(2) Cross-Point Bipolar and Unipolar Resistive Random Access Memory |
作者: | Ho, ChiaHua Huang, Hsin-Hau Lee, Ming-Taou Hsu, Cho-Lun Lai, Tung-Yen Chiu, Wen-Cheng Lee, Meiyi Chou, Tong-Huan Yang, Ivy Chen, Min-Cheng Wu, Cheng-San Chiang, Kuang-Hao Yao, Yong-Der Hu, Chenming Yang, Fu-Liang 交大名義發表 National Chiao Tung University |
公開日期: | 1-一月-2012 |
摘要: | A 3D stackable and bidirectional Threshold Vacuum Switching (TVS) selector using the same WO x material as the RRAM element is reported. It provides the highest reported current density of >10(8) A/cm(2) and the highest selectivity of >10(5). Stress test at high current density indicates >10(8) cycle capability for Reset/Set operation. A mechanism based on recombination of oxygen-ions and vacancies is proposed for the observed volatile switching of TVS. Utilizing the threshold characteristics of the TVS selector, a two-step reading waveform offers potential for 3D-stackable and 4F(2) cross-point RRAM applications. |
URI: | http://hdl.handle.net/11536/146342 |
期刊: | 2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) |
顯示於類別: | 會議論文 |