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dc.contributor.authorChu, Li-Weien_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorKer, Ming-Douen_US
dc.date.accessioned2014-12-08T15:20:33Z-
dc.date.available2014-12-08T15:20:33Z-
dc.date.issued2011-12-01en_US
dc.identifier.issn1551-319Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JDT.2011.2162937en_US
dc.identifier.urihttp://hdl.handle.net/11536/14634-
dc.description.abstractA new integrated gate driver has been successfully designed and fabricated by amorphous silicon (a-Si) technology for a 3.8-in WVGA (800 x RGB x 480) TFT-LCD panel. With the proposed threshold voltage drop-cancellation technique, the output rise time of the proposed integrated gate driver can be substantially decreased by 24.6% for high-resolution display application. Moreover, the proposed noise reduction path between the adjacent gate drivers can reduce the layout area for slim bezel display. The transmittance brightness and contrast ratio of the demonstrated 3.8-inch panel show almost no degradation after the 500 h operation under 70 degrees C and -20 degrees C conditions.en_US
dc.language.isoen_USen_US
dc.subjectAmorphous silicon (a-Si)en_US
dc.subjectgate driveren_US
dc.subjectthin-film transistor liquid-crystal display (TFT-LCD)en_US
dc.titleDesign of Integrated Gate Driver With Threshold Voltage Drop Cancellation in Amorphous Silicon Technology for TFT-LCD Applicationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JDT.2011.2162937en_US
dc.identifier.journalJOURNAL OF DISPLAY TECHNOLOGYen_US
dc.citation.volume7en_US
dc.citation.issue12en_US
dc.citation.spage657en_US
dc.citation.epage664en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000296132300006-
dc.citation.woscount6-
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