完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chiu, Chia-Sung | en_US |
dc.contributor.author | Lin, Shu-Yu | en_US |
dc.contributor.author | Chen, Bo-Yuan | en_US |
dc.contributor.author | Chen, Kun-Ming | en_US |
dc.contributor.author | Huang, Guo-Wei | en_US |
dc.date.accessioned | 2018-08-21T05:56:36Z | - |
dc.date.available | 2018-08-21T05:56:36Z | - |
dc.date.issued | 2010-01-01 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/146402 | - |
dc.description.abstract | This paper presents a nonlinear characterization of active device using polyharmonic distortion model formed by X-parameters. By means of the Polyharmonic distortion model characterized via nonlinear vector network analyzer makes it possible to achieve a good agreement between measured and simulated data in terms of power gain and intermodulation. Furthermore, large-signal validation of this model via X-parameters also shows a good match with measurements in RF LDMOS transistor without optimization. Results show that the X-parameters from nonlinear vector network analyzer appear to be a better method for nonlinear characterization. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Nonlinear | en_US |
dc.subject | Polyharmonic distortion model | en_US |
dc.subject | X-parameters | en_US |
dc.subject | NVNA | en_US |
dc.title | Nonlinear Behavior Characterization of RF Active Devices Using Impedance-dependence X-parameters | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2010 ASIA-PACIFIC MICROWAVE CONFERENCE | en_US |
dc.citation.spage | 2307 | en_US |
dc.citation.epage | 2310 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000394046200548 | en_US |
顯示於類別: | 會議論文 |