Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tang, Ying-Tsan | en_US |
dc.contributor.author | Li, Kai-Shin | en_US |
dc.contributor.author | Li, Lain-Jong | en_US |
dc.contributor.author | Li, Ming-Yang | en_US |
dc.contributor.author | Lin, Chang-Hsien | en_US |
dc.contributor.author | Chen, Yi-Ju | en_US |
dc.contributor.author | Chen, Chun-Chi | en_US |
dc.contributor.author | Su, Chuan-Jung | en_US |
dc.contributor.author | Wu, Bo-Wei | en_US |
dc.contributor.author | Wu, Cheng-San | en_US |
dc.contributor.author | Chen, Min-Cheng | en_US |
dc.contributor.author | Shieh, Jia-Min | en_US |
dc.contributor.author | Yeh, Wen-Kuan | en_US |
dc.contributor.author | Su, Po-Cheng | en_US |
dc.contributor.author | Wang, Tahui | en_US |
dc.contributor.author | Yang, Fu-Liang | en_US |
dc.contributor.author | Hu, Chenming | en_US |
dc.date.accessioned | 2018-08-21T05:56:39Z | - |
dc.date.available | 2018-08-21T05:56:39Z | - |
dc.date.issued | 2016-01-01 | en_US |
dc.identifier.issn | 2380-9248 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/146472 | - |
dc.description.abstract | An atomic-scale numerical study of Si contact with transition metal dichalcogenides (TMD) semiconductor materials is proposed by first-principles simulation for the first time. The monolayer MoS2 channel can be operated as both of n- and p-type FET by properly doping Si S/D to adjust the TMD channel potential. The gradient MoSx junction of dichalcogenide vacancies enables Si-MoS2 contact resistance lower than 100 Omega-mu m for interface Schottky barrier height reduction. The compact Si-MoS2 interface study can potentially provide monolayer TMD contact design guideline for the sub-5 nm TMD FET fabrication technology. | en_US |
dc.language.iso | en_US | en_US |
dc.title | A Numerical Study of Si-TMD Contact with n/p Type Operation and Interface Barrier Reduction for Sub-5 nm Monolayer MoS2 FET | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | en_US |
dc.contributor.department | 電機工程學系 | zh_TW |
dc.contributor.department | Department of Electrical and Computer Engineering | en_US |
dc.identifier.wosnumber | WOS:000399108800090 | en_US |
Appears in Collections: | Conferences Paper |