標題: | Effects of buffer layers and front electrode angles on the performance of In0.16Ga0.84As solar cells |
作者: | Horng, Ray-Hua Wu, Fan-Lei Ou, Sin-Liang Kao, Yu-Cheng Shih, Shan-Hui 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | indium gallium arsenide;InGaAs solar cell;two step;step graded;linear graded;buffer layer |
公開日期: | 1-一月-2016 |
摘要: | Three buffer layers, that included 2-step, step-graded, and linear-graded layers, were designed to improve the performance of In0.16Ga0.84As solar cell. The In0.16Ga0.84As solar cells fabricated on these three buffer layers were denoted as 2S-cell, S-cell, and L-cell, respectively. The efficiencies of these three devices were 9.8%, 14.4%, and 16.3%, respectively. Obviously, the linear-graded buffer layer is most helpful to enhance the efficiency of In0.16Ga0.84As solar cell. Additionally, the front electrode angle of In0.16Ga0.84As solar cell was varied from 0 degrees to 90 degrees. When the angles were fixed at 0 degrees and 90 degrees, the devices possessed higher efficiencies of 16.3% and 16.6%, respectively. |
URI: | http://hdl.handle.net/11536/146537 |
ISSN: | 0160-8371 |
期刊: | 2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) |
起始頁: | 2341 |
結束頁: | 2343 |
顯示於類別: | 會議論文 |