標題: Effects of buffer layers and front electrode angles on the performance of In0.16Ga0.84As solar cells
作者: Horng, Ray-Hua
Wu, Fan-Lei
Ou, Sin-Liang
Kao, Yu-Cheng
Shih, Shan-Hui
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: indium gallium arsenide;InGaAs solar cell;two step;step graded;linear graded;buffer layer
公開日期: 1-一月-2016
摘要: Three buffer layers, that included 2-step, step-graded, and linear-graded layers, were designed to improve the performance of In0.16Ga0.84As solar cell. The In0.16Ga0.84As solar cells fabricated on these three buffer layers were denoted as 2S-cell, S-cell, and L-cell, respectively. The efficiencies of these three devices were 9.8%, 14.4%, and 16.3%, respectively. Obviously, the linear-graded buffer layer is most helpful to enhance the efficiency of In0.16Ga0.84As solar cell. Additionally, the front electrode angle of In0.16Ga0.84As solar cell was varied from 0 degrees to 90 degrees. When the angles were fixed at 0 degrees and 90 degrees, the devices possessed higher efficiencies of 16.3% and 16.6%, respectively.
URI: http://hdl.handle.net/11536/146537
ISSN: 0160-8371
期刊: 2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)
起始頁: 2341
結束頁: 2343
顯示於類別:會議論文