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dc.contributor.authorHong, Chung-Yuen_US
dc.contributor.authorLin, Yu-Chenen_US
dc.contributor.authorHo, Kuan-Yingen_US
dc.contributor.authorTsai, Jia-Lingen_US
dc.contributor.authorChien, Zhan-Tienen_US
dc.contributor.authorWu, Yuh-Rennen_US
dc.contributor.authorLin, Alberten_US
dc.contributor.authorUen, Wu-Yihen_US
dc.contributor.authorChi, Gou-Chungen_US
dc.contributor.authorYu, Peichenen_US
dc.date.accessioned2018-08-21T05:56:42Z-
dc.date.available2018-08-21T05:56:42Z-
dc.date.issued2016-01-01en_US
dc.identifier.issn0160-8371en_US
dc.identifier.urihttp://hdl.handle.net/11536/146539-
dc.description.abstractIn this work, we present a thin-film GaAs solar cell employing via contacts for forming a back-contacted solar cell to eliminate light blocking effects and enhance photon recycling at the same time. The fabrication procedure and the characterization of the fabricated devices are discussed in this paper. From our measurement, a conversion efficiency of 6.5%, open circuit voltage of 0.95 V, and a current density of 8.6mA/cm(2) under one-sun illumination were obtained in a 5x5 mm cell.en_US
dc.language.isoen_USen_US
dc.subjectGaAs solar cellsen_US
dc.subjectback-contacteden_US
dc.subjectthin filmen_US
dc.titleBack-Contacted Thin-Film GaAs Solar Cellsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)en_US
dc.citation.spage3629en_US
dc.citation.epage3631en_US
dc.contributor.department電機學院zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000399818703141en_US
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