標題: A highly reliable self-aligned graded oxide WOx resistance memory: Conduction mechanisms and reliability
作者: Ho, ChiaHua
Lai, E. K.
Lee, M. D.
Pan, C. L.
Yao, Y. D.
Hsieh, K. Y.
Liu, Rich
Lu, C. Y.
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: RRAM;WOx;self-aligned;reliability
公開日期: 1-Jan-2007
摘要: WOx formed by plasmas oxidation shows promising multibit/cell resistance memory characteristics [1]. The simple memory is completely self-aligned, requiring no additional masks and has a small 6F(2) cell size. In this work we introduce a graded oxide device that is highly reliable (250 degrees C baking for > 2,000 hrs). The conduction mechanism and factors affecting the memory reliability are examined extensively.
URI: http://dx.doi.org/10.1109/VLSIT.2007.4339703
http://hdl.handle.net/11536/146578
DOI: 10.1109/VLSIT.2007.4339703
期刊: 2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS
起始頁: 228
Appears in Collections:Conferences Paper