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dc.contributor.authorHo, ChiaHuaen_US
dc.contributor.authorLai, E. K.en_US
dc.contributor.authorLee, M. D.en_US
dc.contributor.authorPan, C. L.en_US
dc.contributor.authorYao, Y. D.en_US
dc.contributor.authorHsieh, K. Y.en_US
dc.contributor.authorLiu, Richen_US
dc.contributor.authorLu, C. Y.en_US
dc.date.accessioned2018-08-21T05:56:44Z-
dc.date.available2018-08-21T05:56:44Z-
dc.date.issued2007-01-01en_US
dc.identifier.urihttp://dx.doi.org/10.1109/VLSIT.2007.4339703en_US
dc.identifier.urihttp://hdl.handle.net/11536/146578-
dc.description.abstractWOx formed by plasmas oxidation shows promising multibit/cell resistance memory characteristics [1]. The simple memory is completely self-aligned, requiring no additional masks and has a small 6F(2) cell size. In this work we introduce a graded oxide device that is highly reliable (250 degrees C baking for > 2,000 hrs). The conduction mechanism and factors affecting the memory reliability are examined extensively.en_US
dc.language.isoen_USen_US
dc.subjectRRAMen_US
dc.subjectWOxen_US
dc.subjectself-aligneden_US
dc.subjectreliabilityen_US
dc.titleA highly reliable self-aligned graded oxide WOx resistance memory: Conduction mechanisms and reliabilityen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/VLSIT.2007.4339703en_US
dc.identifier.journal2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERSen_US
dc.citation.spage228en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000250539900089en_US
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