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dc.contributor.authorLu, Cheng-Hsienen_US
dc.contributor.authorKho, Yi-Tungen_US
dc.contributor.authorCheng, Chuan-Anen_US
dc.contributor.authorHuang, Yen-Junen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2018-08-21T05:56:46Z-
dc.date.available2018-08-21T05:56:46Z-
dc.date.issued2017-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/146626-
dc.description.abstractHybrid bonding is one of the key technologies in 3D IC integration, which can integrate various functional chips using vertical interconnection to reduce RC delay and realize heterogeneous integration by bonding process. Conventional hybrid bonding uses oxide layer as the filling material between the metal interconnect, which can prevent oxidation of metal layer and enhance the bonding strength. However, there are some issues of oxide layer such as its poor stress absorption and the demand of surface flatness. Polymer is the potential material to replace oxide as hybrid bonding material because of its stress release property and better surface roughness tolerance. This paper investigates the adhesion properties of polymer and passivation layer and demonstrates perfect polymer-to-polymer wafer-level bonding results.en_US
dc.language.isoen_USen_US
dc.subject3D ICen_US
dc.subjecthybrid bondingen_US
dc.subjectpolymer adhesionen_US
dc.titlePolymer for Wafer-level Hybrid Bonding and Its Adhesion to Passivation Layer in 3D Integrationen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING (ICEP)en_US
dc.citation.spage519en_US
dc.citation.epage521en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000403391900126en_US
Appears in Collections:Conferences Paper