完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHo, Yen-Tengen_US
dc.contributor.authorChu, Yung-Chingen_US
dc.contributor.authorWei, Lin-Lungen_US
dc.contributor.authorLuong, Tien-Tungen_US
dc.contributor.authorLin, Chih-Chienen_US
dc.contributor.authorCheng, Chun-Hungen_US
dc.contributor.authorHsu, Hung-Ruen_US
dc.contributor.authorTu, Yung-Yien_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2018-08-21T05:56:49Z-
dc.date.available2018-08-21T05:56:49Z-
dc.date.issued2017-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/146681-
dc.description.abstractWafer sized, high quality continuous fihns would be a key demand for MoS2 implemented in circuit application. In this study, the growth of few monolayer Mo-S2 on 4 inches SiO2/Si substrate were demonstrated. The MoS2 thin films were synthesized by sulfurized in a furnace from the ultra-thin MoO3 starting materials by using H2S. The obtained MoS2 thin film examined by Raman analysis and Photoluminescence (PL), shows the semiconductor nature with direct transition peaks of 1.86 eV and 1.99 eV. The 4 5 monolayer of MoS2 with thickness around 2.6 nm is confirmed by cross-sectional view of transmission electron microscopy (TEM). Additionally, the DC characteristics of MoS2 MOSFETs exhibit at least 2 order in on/off current ratio, demonstrating the feasibility for circuit application.en_US
dc.language.isoen_USen_US
dc.titleWAFER SIZE MOS2 WITH FEW MONOLAYER SYNTHESIZED BY H2S SULFURIZATIONen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC 2017)en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000404176400154en_US
顯示於類別:會議論文