BUFFER-OPTIMIZED IMPROVEMENT IN RF LOSS OF ALGAN/GAN HEMTS ON 4-INCH SILICON (111)

標題:	BUFFER-OPTIMIZED IMPROVEMENT IN RF LOSS OF ALGAN/GAN HEMTS ON 4-INCH SILICON (111)
作者:	Luong, Tien Tung Lumbantoruan, Franky Chen, Yen-Yu Ho, Yen-Teng Lin, Yueh-Chin Chang, Shane Chang, Edward-Yi 材料科學與工程學系電機學院 Department of Materials Science and Engineering College of Electrical and Computer Engineering
公開日期:	1-Jan-2017
摘要:	The effect of different buffer layers on the RF losses of GaN-based high-mobility-transistors (HEMTs) on Si substrate has been studied. It is found that the electron inversion layer induced by the residual tensile stress in AlN buffer is responsible for a dominant loss factor. It is first time such mechanisms of the RF loss of GaN/Si is discussed. It is proven that using a thin high-low-high temperature (HLH) AlN buffer reducing the tensile stress in AlN consequently reduces the RF loss.
URI:	http://hdl.handle.net/11536/146682
期刊:	2017 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC 2017)
Appears in Collections:	Conferences Paper