Low temperature Cu-Cu direct bonding by (111) oriented nano-twin Cu

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DC Field	Value	Language
dc.contributor.author	Juang, Jing-Ye	en_US
dc.contributor.author	Chu, Yi-Cheng	en_US
dc.contributor.author	Lu, Chia-Ling	en_US
dc.contributor.author	Chen, Chih	en_US
dc.contributor.author	Tu, King-Ning	en_US
dc.date.accessioned	2018-08-21T05:56:49Z	-
dc.date.available	2018-08-21T05:56:49Z	-
dc.date.issued	2017-01-01	en_US
dc.identifier.uri	http://hdl.handle.net/11536/146685	-
dc.description.abstract	In this study, a low temperature solid state diffusion bonding process with (111) highly oriented nano-twined Cu (nt-Cu) was proposed. A less void bonding interface was observed reveals a good bonding quality for the bonded samples. In addition, a large quasisingle grain was identified in the bonded film. Based on these results, it is believed that high strength and durable bonding structure can be accomplished by bonding two highly (111)-oriented nt-Cu films.	en_US
dc.language.iso	en_US	en_US
dc.title	Low temperature Cu-Cu direct bonding by (111) oriented nano-twin Cu	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)	en_US
dc.citation.spage	32	en_US
dc.citation.epage	32	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000404249700032	en_US
Appears in Collections:	Conferences Paper