標題: Influence of Passivation Layers on Characteristics of High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistors
作者: Liu, P. T.
Chang, C. H.
Zheng, G. T.
Chang, C. C.
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 1-Jan-2016
摘要: We investigated the influence of passivation-layer deposition on the characteristics of a-InZnSnO thin-film transistors (TFTs). The threshold voltage (Vth) of the TFTs shifted markedly as a result of the ion bombardment induced by the passivation layers above. By adjusting the post annealing temperature, the performance of the TFTs can be modulated. The a-InZnSnO TFTs after passivation exhibited good performance with a field-effect mobility of 21.34 cm(2)/Vs, a threshold voltage of -5.03V, and a subthreshold slope of 0.52 V/decade.
URI: http://dx.doi.org/10.1149/07510.0163ecst
http://hdl.handle.net/11536/146714
ISSN: 1938-5862
DOI: 10.1149/07510.0163ecst
期刊: THIN FILM TRANSISTORS 13 (TFT 13)
Volume: 75
起始頁: 163
結束頁: 168
Appears in Collections:Conferences Paper