標題: Fabrication and characterization of amorphous In Zn-O/SiO(x)/n-Si heterojunction solar cells
作者: Fang, Hau-Wei
Liu, Shiu-Jen
Hsieh, Tsung-Eong
Juang, Jenh-Yih
Hsieh, Jang-Hsing
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
公開日期: 1-Nov-2011
摘要: Amorphous In-Zn-O (a-IZO) films were deposited on SiO(x) covered n-type Si substrates by using pulsed laser deposition (PLD) technique to form a-IZO/SiO(x)/n-Si heterojunction solar cells. The a-IZO films grown at 150 degrees C with various laser power (250-500 mJ/pulse) exhibit low resistivity (2-3 x 10(-3) Omega cm) and high transparency (similar to 80%) in the visible wavelength range. The highest conversion efficiency of the fabricated a-IZO/SiO(x)/n-Si solar cells is 2.2% under 100 mW/cm(2) illumination (AM 1.5 condition). The open-circuit voltage, short-circuit current density and fill factor of the best device are 0.24 V, 28.4 mA/cm(2) and 33.6%, respectively. (C) 2011 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.solener.2011.07.016
http://hdl.handle.net/11536/14672
ISSN: 0038-092X
DOI: 10.1016/j.solener.2011.07.016
期刊: SOLAR ENERGY
Volume: 85
Issue: 11
起始頁: 2589
結束頁: 2594
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