標題: High-Speed and High-Power GaSb Based Photodiode for 2.5 mu m Wavelength Operations
作者: Chao, Rui-Lin
Wun, Jhih-Min
Wang, Yu-Wen
Chen, Yi-Han
Bowers, J. E.
Shi, Jin-Wei
光電工程學系
Department of Photonics
公開日期: 1-一月-2016
摘要: By using partially depleted Ga0.8In0.2As0.16Sb0.84 absorber in GaSb based photodiodes for 2.5 mu m wave length operation, such device achieves high-speed and high-saturation current (3.6 mA/6 GHz) performances with low dark current (0.7 mu A at -2V). Device modeling results suggest that the internal carrier response time limits its dynamic performance.
URI: http://hdl.handle.net/11536/146741
ISSN: 2374-0140
期刊: 2016 IEEE PHOTONICS CONFERENCE (IPC)
起始頁: 472
結束頁: 473
顯示於類別:會議論文