標題: A high-speed 850-nm optical receiver by integrating Si photodiode and CMOS IC
作者: Hsin, Y. M.
Huang, W. K.
Liu, Y. C.
Yan, B. E.
Chen, W. Z.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Si;850-nm;optical receiver;CMOS;photodiode
公開日期: 1-Jan-2008
摘要: In this work, three approaches are proposed to implement high-speed 850-nm optical receivers fully in standard bulk 0.18 pm silicon (Si) CMOS technology. In the first approach, the lateral p-i-n photodiode (PD) with designed block well to limit the photocarriers being generated from the laterally depleted regions is integrated in optical receiver. The receiver consists of TIA, LA, offset-cancellation-network and buffer to provide a conversion gain of 110 dB Omega and data rate of 2.5 Gbps operation. In the second receiver, the spatially modulated PD (SMPD) with -3 dB bandwidth of 590 MHz is integrated in optical receiver with the extra adaptive equalizer and demonstrates a data rate of 3.125 Gbps. Finally, the proposed novel structure of PD eliminates the slow diffusion photocarriers by using body contact design to create a new current path under the PD. A bandwidth of 2.8 GHz with 100 % improvement in PD is obtained. The eye diagrams of PD with cable connected amplifiers at 2.5 Gbps, 4 Gbps and 5 Gbps are demonstrated. Furthermore, the optical receiver's optical-electrical (O-E) conversion bandwidth is also increased from 3.6 GHz to 4.3 GHz. To our knowledge, these are the highest O-E conversion bandwidth of the PD and optical receiver ever reported by using the standard bulk 0.18 mu m Si CMOS technology.
URI: http://dx.doi.org/10.1117/12.761553
http://hdl.handle.net/11536/146744
ISBN: 978-0-8194-7074-4
ISSN: 0277-786X
DOI: 10.1117/12.761553
期刊: PHOTONICS PACKAGING, INTEGRATION, AND INTERCONNECTS VIII
Volume: 6899
起始頁: 0
結束頁: 0
Appears in Collections:Conferences Paper


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