Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Zackriya, Mohammed, V | en_US |
dc.contributor.author | Chin, Albert | en_US |
dc.contributor.author | Kittur, Harish M. | en_US |
dc.date.accessioned | 2018-08-21T05:56:52Z | - |
dc.date.available | 2018-08-21T05:56:52Z | - |
dc.date.issued | 2017-01-01 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/146767 | - |
dc.description.abstract | Using novel circuit design topology to include the sneak path current as a reference input, the performance of two RRAM devices with I-ON/I-OFF of 26 and 925 were compared for crosspoint array. The RRAM with better current distribution outperforms the RRAM with 36X higher I-ON/I-OFF, on crosspoint array. Thus, the RRAM devices should aim on tightening the current distribution, where high I-ON/I-OFF also consumes high power on circuit. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | RRAM array | en_US |
dc.subject | I-ON/I-OFF and distribution | en_US |
dc.title | Impact of Current Distribution on RRAM Array with High and Low I-ON/I-OFF Devices | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM) | en_US |
dc.citation.spage | 156 | en_US |
dc.citation.epage | 157 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000409022100065 | en_US |
Appears in Collections: | Conferences Paper |