Impact of Current Distribution on RRAM Array with High and Low I-ON/I-OFF Devices

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Zackriya, Mohammed, V	en_US
dc.contributor.author	Chin, Albert	en_US
dc.contributor.author	Kittur, Harish M.	en_US
dc.date.accessioned	2018-08-21T05:56:52Z	-
dc.date.available	2018-08-21T05:56:52Z	-
dc.date.issued	2017-01-01	en_US
dc.identifier.uri	http://hdl.handle.net/11536/146767	-
dc.description.abstract	Using novel circuit design topology to include the sneak path current as a reference input, the performance of two RRAM devices with I-ON/I-OFF of 26 and 925 were compared for crosspoint array. The RRAM with better current distribution outperforms the RRAM with 36X higher I-ON/I-OFF, on crosspoint array. Thus, the RRAM devices should aim on tightening the current distribution, where high I-ON/I-OFF also consumes high power on circuit.	en_US
dc.language.iso	en_US	en_US
dc.subject	RRAM array	en_US
dc.subject	I-ON/I-OFF and distribution	en_US
dc.title	Impact of Current Distribution on RRAM Array with High and Low I-ON/I-OFF Devices	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM)	en_US
dc.citation.spage	156	en_US
dc.citation.epage	157	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000409022100065	en_US
顯示於類別：	會議論文