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dc.contributor.authorFan, Chia-Chien_US
dc.contributor.authorChiu, Yu-Chienen_US
dc.contributor.authorLiu, Chienen_US
dc.contributor.authorLiou, Guan-Linen_US
dc.contributor.authorLai, Wen-Weien_US
dc.contributor.authorChen, Yi-Ruen_US
dc.contributor.authorCheng, Chun-Huen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2018-08-21T05:56:52Z-
dc.date.available2018-08-21T05:56:52Z-
dc.date.issued2017-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/146769-
dc.description.abstractIn this work, we proposal a ferroelectric domain to enhance program/erase/read efficiency of conventional charge-trapping nonvolatile memory. The ferroelectric-domain-dominated HfZrO/HfON memory shows the better subthreshold characteristics than control charge-trapping structure (HfO2/HfON). Additionally, the memory speed with ferroelectric polarization (similar to 800ns) is more than three orders of magnitude faster than that of control trapping type.en_US
dc.language.isoen_USen_US
dc.subjectFerroelectric domainen_US
dc.subjectHfZrO and HfONen_US
dc.titleImpact of Ferroelectric Domain Switching in Nonvolatile Charge-Trapping Memoryen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM)en_US
dc.citation.spage224en_US
dc.citation.epage225en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000409022100092en_US
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