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dc.contributor.authorLin, Yu-Hsuanen_US
dc.contributor.authorPeng, Shih-Fanen_US
dc.contributor.authorHwang, Weien_US
dc.date.accessioned2018-08-21T05:56:53Z-
dc.date.available2018-08-21T05:56:53Z-
dc.date.issued2017-01-01en_US
dc.identifier.issn2474-2724en_US
dc.identifier.urihttp://hdl.handle.net/11536/146792-
dc.description.abstractNowadays, big data becomes one of most popular topics in the world. Analyzing these data needs large amount of memory accessing. For the requests of multi users, the memory need high bandwidth and high density. The power of moving data also needs to be considered in the big data generation. High density 3D-Stacked DRAM is the potential solution for the big data storage. By applying the through-silicon-vias (TSVs) technology in 3D-Stacked DRAM, the I/O pins between logic tiers and DRAM are at least 32x larger comparing the conventional DRAMs. In order to utilize the 3D- DRAM lager capacity and memory bandwidth, a new advanced 3-D memory controller is needed. In this paper, we present an energy-efficient DRAM controller to fully utilize the benefit offer for 3D-Stacked DRAM. The controller uses command rescheduling and rank interleaving to parallel the commands from multi users, and the self-refresh can save the power for 3D-Stacked DRAM refresh. Using near-data processing short the data path of transfer and makes the energy consumption decreased. The controller can realize the bandwidth improvement by 66.8%, and the execution time improvement by 40.08%. The energy consumption also decrease 27.18%.en_US
dc.language.isoen_USen_US
dc.titleWIDE-I/O 3D-STAKED DRAM CONTROLLER FOR NEAR-DATA PROCESSING SYSTEMen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION AND TEST (VLSI-DAT)en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000411184600047en_US
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