Photonic Crystal Surface Emitting Lasers with InAs/InGaAs/GaAs Quantum Dots

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DC 欄位	值	語言
dc.contributor.author	Chen, Tzu-Shan	en_US
dc.contributor.author	Lee, Zong-Lin	en_US
dc.contributor.author	Hsu, Ming-Yang	en_US
dc.contributor.author	Lin, Gray	en_US
dc.contributor.author	Lin, Sheng-Di	en_US
dc.date.accessioned	2018-08-21T05:56:57Z	-
dc.date.available	2018-08-21T05:56:57Z	-
dc.date.issued	2017-01-01	en_US
dc.identifier.uri	http://hdl.handle.net/11536/146854	-
dc.description.abstract	InAs/InGaAs/GaAs quantum-dot (QD) photonic crystal (PC) surface emitting lasers were fabricated and room-temperature lasing emissions were demonstrated by optical pumping for the first time. The etch depth of PC holes is the critical parameter for adjacent diffraction coupling between PC structure and QD gain media.	en_US
dc.language.iso	en_US	en_US
dc.subject	InAs quantum dots	en_US
dc.subject	optical pumping	en_US
dc.subject	photonic crystal	en_US
dc.subject	semiconductor lasers	en_US
dc.subject	surface emitting lasers	en_US
dc.title	Photonic Crystal Surface Emitting Lasers with InAs/InGaAs/GaAs Quantum Dots	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR)	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000417416900474	en_US
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