標題: Characteristics of InGaAs submonolayer quantum-dot and InAs quantum-dot photonic-crystal vertical-cavity surface-emitting lasers
作者: Yang, Hung-Pin D.
Hsu, I. -Chen
Chang, Ya-Hsien
Lai, Fang-I
Yu, Hsin-Chieh
Lin, Gray
Hsiao, Ru-Shang
Maleev, Nikolai A.
Blokhin, Sergej A.
Kuo, Hao-Chung
Chi, Jim Y.
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
關鍵字: photonic-crystal (PhC);quantum-dot (QD);submonolayer (SML);vertical-cavity surface-emitting laser (VCSEL)
公開日期: 1-五月-2008
摘要: We have made InGaAs submonolayer (SML) quantum-dot (QD) and InAs QD photonic-crystal vertical-cavity surface-emitting lasers (PhC-VCSELs) for fiber-optic communications in the 990 and 1300 nm ranges, respectively. The active region of the InGaAs SML QD PhC-VCSEL contains three InGaAs SML QD layers, with each of the SML QD layer formed by alternating depositions of InAs (< 1 ML) and GaAs. The active region of the InAs QD PhC-VCSEL contains 17 undoped InAs-InGaAs QD layers. Both types of QD PhC-VCSELs exhibit single-mode characteristics throughout the current range, with side-mode suppression ratio (SMSR) larger than 35 dB. A maximum output power of 5.7 mW has been achieved for the InGaAs SML QD PhC-VCSEL. The near-field image study of the QD PhC-VCSELs indicates that the laser beam is well confined by the photonic-crystal structure of the device.
URI: http://dx.doi.org/10.1109/JLT.2008.922172
http://hdl.handle.net/11536/9396
ISSN: 0733-8724
DOI: 10.1109/JLT.2008.922172
期刊: JOURNAL OF LIGHTWAVE TECHNOLOGY
Volume: 26
Issue: 9-12
起始頁: 1387
結束頁: 1395
顯示於類別:期刊論文