標題: | Characteristics of InGaAs submonolayer quantum-dot and InAs quantum-dot photonic-crystal vertical-cavity surface-emitting lasers |
作者: | Yang, Hung-Pin D. Hsu, I. -Chen Chang, Ya-Hsien Lai, Fang-I Yu, Hsin-Chieh Lin, Gray Hsiao, Ru-Shang Maleev, Nikolai A. Blokhin, Sergej A. Kuo, Hao-Chung Chi, Jim Y. 電子工程學系及電子研究所 光電工程學系 Department of Electronics Engineering and Institute of Electronics Department of Photonics |
關鍵字: | photonic-crystal (PhC);quantum-dot (QD);submonolayer (SML);vertical-cavity surface-emitting laser (VCSEL) |
公開日期: | 1-五月-2008 |
摘要: | We have made InGaAs submonolayer (SML) quantum-dot (QD) and InAs QD photonic-crystal vertical-cavity surface-emitting lasers (PhC-VCSELs) for fiber-optic communications in the 990 and 1300 nm ranges, respectively. The active region of the InGaAs SML QD PhC-VCSEL contains three InGaAs SML QD layers, with each of the SML QD layer formed by alternating depositions of InAs (< 1 ML) and GaAs. The active region of the InAs QD PhC-VCSEL contains 17 undoped InAs-InGaAs QD layers. Both types of QD PhC-VCSELs exhibit single-mode characteristics throughout the current range, with side-mode suppression ratio (SMSR) larger than 35 dB. A maximum output power of 5.7 mW has been achieved for the InGaAs SML QD PhC-VCSEL. The near-field image study of the QD PhC-VCSELs indicates that the laser beam is well confined by the photonic-crystal structure of the device. |
URI: | http://dx.doi.org/10.1109/JLT.2008.922172 http://hdl.handle.net/11536/9396 |
ISSN: | 0733-8724 |
DOI: | 10.1109/JLT.2008.922172 |
期刊: | JOURNAL OF LIGHTWAVE TECHNOLOGY |
Volume: | 26 |
Issue: | 9-12 |
起始頁: | 1387 |
結束頁: | 1395 |
顯示於類別: | 期刊論文 |