標題: | Characteristics of single-mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs emitting in the 990 nm range |
作者: | Yang, Hung-Pin D. Hsu, I. -Chen Lai, Fang-I. Lin, Gray Hsiao, Ru-Shang Kuo, Hao-Chung Chi, Jim Y. 交大名義發表 National Chiao Tung University |
關鍵字: | InGaAs;photonic-crystal;sub-monolayer;quantum-dot;VCSEL |
公開日期: | 2008 |
摘要: | We have made InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting lasers (QD PhC-VCSELs) for fiber-optic applications. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layer is formed by alternate deposition of InAs (< 1 ML) and GaAs. Single fundamental mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. Side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over the entire current operation range. Near-field images of the PhC-VCSELs were also measured and studied. |
URI: | http://hdl.handle.net/11536/9808 http://dx.doi.org/10.1080/09500340701576288 |
ISSN: | 0950-0340 |
DOI: | 10.1080/09500340701576288 |
期刊: | JOURNAL OF MODERN OPTICS |
Volume: | 55 |
Issue: | 6 |
起始頁: | 1013 |
結束頁: | 1021 |
顯示於類別: | 期刊論文 |