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dc.contributor.authorShirota, Riichiroen_US
dc.contributor.authorSakamoto, Yoshinorien_US
dc.contributor.authorHsueh, Hung-Mingen_US
dc.contributor.authorJaw, Jian-Mingen_US
dc.contributor.authorChao, Wen-Chuanen_US
dc.contributor.authorChao, Chih-Mingen_US
dc.contributor.authorYang, Sheng-Fuen_US
dc.contributor.authorArakawa, Hidekien_US
dc.date.accessioned2014-12-08T15:20:40Z-
dc.date.available2014-12-08T15:20:40Z-
dc.date.issued2011-11-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2011.2165073en_US
dc.identifier.urihttp://hdl.handle.net/11536/14691-
dc.description.abstractThe effect of the activated floating-gate (FG) impurity concentration on the programmed threshold-voltage (V(t)) distribution was newly investigated and analyzed. The lower FG impurity concentration leads to a wider threshold-voltage distribution, which is explained by the time-dependent tunnel-oxide electric-field enhancement effect induced by the reduction of the depletion region in the FG as the programming time is lengthened. Initially, the FG is deeply depleted at the interface of the tunnel oxide. However, as the programming time is prolonged, electrons by Fowler-Nordheim (FN) tunneling in the FG generate electron-hole pairs, and generated holes are gathered at the interface of the tunnel oxide, which reduces the depletion region, and enhance the oxide electric filed. The enhancement effect of the electric field for the tunnel oxide is coupled to the FN tunneling statistics and enlarges the distribution of the programmed Vt. This effect is more clearly observed at the lower FG impurity concentration, which gives the limitation of the minimum impurity concentration in FG. Monte Carlo simulations considering both the tunnel-oxide electric-field enhancement effect and FN tunneling statistics were carried out and showed good agreement with the experiments.en_US
dc.language.isoen_USen_US
dc.subjectElectron injection statisticsen_US
dc.subjectFlash memory devicesen_US
dc.subjectFowler-Nordheim (FN) tunnelingen_US
dc.subjectprogram efficiencyen_US
dc.subjectsemiconductor device modelingen_US
dc.titleAnalysis of the Correlation Between the Programmed Threshold-Voltage Distribution Spread of NAND Flash Memory Devices and Floating-Gate Impurity Concentrationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2011.2165073en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume58en_US
dc.citation.issue11en_US
dc.citation.spage3712en_US
dc.citation.epage3719en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000296099400008-
dc.citation.woscount5-
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