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dc.contributor.authorChang, Wei Lingen_US
dc.contributor.authorMeng, Chinchunen_US
dc.contributor.authorYang, Shih-Deren_US
dc.contributor.authorHuang, Guo-Weien_US
dc.date.accessioned2018-08-21T05:57:01Z-
dc.date.available2018-08-21T05:57:01Z-
dc.date.issued2017-01-01en_US
dc.identifier.issn0149-645Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/146952-
dc.description.abstractA dual-mode receiver architecture with tens-MHz channel bandwidth at microwave mode and GHz channel bandwidth at millimeter-wave mode is demonstrated in this work with a tunable active filter for RF channel selection at microwave mode using 0.18 mu m SiGe BiCMOS technology. A dual conversion is employed to accommodate the wide-channel-bandwidth 60-GHz mode at the first conversion stage and the high-level-modulation 5-GHz mode is merged to the second conversion stage through sharing the 5-GHz switchable Gilbert IQ mixers with the 60-GHz mode. A tunable RF active filter is inserted between the 5-GHz LNA and the second stage mixer to serve as RF channel selection at the 5-GHz mode with the ability of relaxing the stringent linearity requirement imposed by high-level-modulation scheme. 10 dB gain with a 2-GHz channel bandwidth at the 60-GHz mode and 23 dB gain with a 20 MHz channel bandwidth within the 600 MHz tuning range at 5-GHz mode are demonstrated with a low-flicker-noise corner of less than 60 KHz at the 5-GHz mode because of the use of SiGe HBT as the IQ Gilbert mixer cores at the second conversion stage.en_US
dc.language.isoen_USen_US
dc.subjectRF channel selectionen_US
dc.subjectQ-enhanced active filteren_US
dc.subjectdual-modeen_US
dc.subjectdual-conversionen_US
dc.subjectSchottky diodeen_US
dc.subjectSiGe BiCMOSen_US
dc.title0.18 mu m SiGe BiCMOS Microwave/Millimeter-wave Dual-Mode Dual-Conversion Receiver Architecture With a Tunable RF Channel Selection at Low-Flicker-Noise Microwave Modeen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS)en_US
dc.citation.spage1778en_US
dc.citation.epage1780en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000425241500479en_US
Appears in Collections:Conferences Paper