完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chang, Wei Ling | en_US |
dc.contributor.author | Meng, Chinchun | en_US |
dc.contributor.author | Yang, Shih-Der | en_US |
dc.contributor.author | Huang, Guo-Wei | en_US |
dc.date.accessioned | 2018-08-21T05:57:01Z | - |
dc.date.available | 2018-08-21T05:57:01Z | - |
dc.date.issued | 2017-01-01 | en_US |
dc.identifier.issn | 0149-645X | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/146952 | - |
dc.description.abstract | A dual-mode receiver architecture with tens-MHz channel bandwidth at microwave mode and GHz channel bandwidth at millimeter-wave mode is demonstrated in this work with a tunable active filter for RF channel selection at microwave mode using 0.18 mu m SiGe BiCMOS technology. A dual conversion is employed to accommodate the wide-channel-bandwidth 60-GHz mode at the first conversion stage and the high-level-modulation 5-GHz mode is merged to the second conversion stage through sharing the 5-GHz switchable Gilbert IQ mixers with the 60-GHz mode. A tunable RF active filter is inserted between the 5-GHz LNA and the second stage mixer to serve as RF channel selection at the 5-GHz mode with the ability of relaxing the stringent linearity requirement imposed by high-level-modulation scheme. 10 dB gain with a 2-GHz channel bandwidth at the 60-GHz mode and 23 dB gain with a 20 MHz channel bandwidth within the 600 MHz tuning range at 5-GHz mode are demonstrated with a low-flicker-noise corner of less than 60 KHz at the 5-GHz mode because of the use of SiGe HBT as the IQ Gilbert mixer cores at the second conversion stage. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | RF channel selection | en_US |
dc.subject | Q-enhanced active filter | en_US |
dc.subject | dual-mode | en_US |
dc.subject | dual-conversion | en_US |
dc.subject | Schottky diode | en_US |
dc.subject | SiGe BiCMOS | en_US |
dc.title | 0.18 mu m SiGe BiCMOS Microwave/Millimeter-wave Dual-Mode Dual-Conversion Receiver Architecture With a Tunable RF Channel Selection at Low-Flicker-Noise Microwave Mode | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | en_US |
dc.citation.spage | 1778 | en_US |
dc.citation.epage | 1780 | en_US |
dc.contributor.department | 電機工程學系 | zh_TW |
dc.contributor.department | Department of Electrical and Computer Engineering | en_US |
dc.identifier.wosnumber | WOS:000425241500479 | en_US |
顯示於類別: | 會議論文 |