标题: | Germanium Nanowire-induced Mobility Enhancement in Polythiophene Field Effect Transistors |
作者: | Hsieh, Gen-Wen Chan, Chih-Yu Tsai, Chih-Wen 光电工程学系 Department of Photonics |
公开日期: | 1-一月-2017 |
摘要: | P-channel solution-processed organic thin film transistors based on a dual layer semiconducting network of polythiophene polymers and oriented germanium nanowires show a marked enhancement of up to five-fold in hole field effect mobility with respect to that of pristine polythiophene devices. The work presented here furthers our understanding of the interaction between polythiophene and oriented nanowires. The nanowire orientation relative to the soure and drain electrodes plays a crucial role in substantially influencing the polymer morphology and transistor performance. |
URI: | http://hdl.handle.net/11536/146991 |
期刊: | 2017 24TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD) |
起始页: | 199 |
结束页: | 200 |
显示于类别: | Conferences Paper |