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dc.contributor.authorGuo, Jyh-Chyurnen_US
dc.contributor.authorLin, Ching-Shiangen_US
dc.date.accessioned2018-08-21T05:57:06Z-
dc.date.available2018-08-21T05:57:06Z-
dc.date.issued2017-01-01en_US
dc.identifier.issn2325-0305en_US
dc.identifier.urihttp://hdl.handle.net/11536/147048-
dc.description.abstractA ultra-wideband (UWB) low noise amplifier (LNA) has been realized in 0.18 mu m CMOS technology. The current-reused method combined with forward body bias (FBB) in a cascade amplifier can enable an aggressive voltages scaling, such as V-DD and V-G1 to 1.0V and 0.53V, i.e. 44.5% and 70.6% reduction compared to the typical VDD of 1.8V. The low voltage feature from FBB leads to more than 50% saving of power dissipation to 5.2mW. The on-chip measurement indicates power gain (S-21) of 10.55 similar to 12.6dB and noise figure (NF50) of 3.2 similar to 3.95 dB through the UWB (3 similar to 10.5GHz). This UWB LNA with small chip area (0.69mm(2)) provides a solution for low voltages, low power, and low cost.en_US
dc.language.isoen_USen_US
dc.subjectUWBen_US
dc.subjectLNAen_US
dc.subjectLow voltageen_US
dc.subjectCurrent-reuseden_US
dc.subjectFBBen_US
dc.subjectCascade amplifieren_US
dc.titleLow Power UWB CMOS LNA Using Resistive Feedback and Current-Reused Techniques Under Forward Body Biasen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 47TH EUROPEAN MICROWAVE CONFERENCE (EUMC)en_US
dc.citation.spage584en_US
dc.citation.epage587en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000426921500123en_US
Appears in Collections:Conferences Paper