標題: | A 3-10 GHz CMOS UWB Low-Noise Amplifier With ESD Protection Circuits |
作者: | Wu, Chung-Yu Lo, Yi-Kai Chen, Min-Chiao 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | CMOS;electrostatic discharge (ESD);low-noise amplifier (LNA);ultra-wide band (UWB) |
公開日期: | 1-十一月-2009 |
摘要: | A low-power fully integrated low-noise amplifier (LNA) with an on-chip electrostatic-static discharge (ESD) protection circuit for ultra-wide band (UWB) applications is presented. With the use of a common-gate scheme with a g(m)-boosted technique, a simple input matching network, low noise figure (NF), and low power consumption can be achieved. Through the combination of an input matching network, an ESD clamp circuit has been designed for the proposed LNA circuit to enhance system robustness. The measured results show that the fabricated LNA can be operated over the full UWB bandwidth of 3.0 to 10.35 GHz. The input return loss (S(11)) and output return loss (S(22)) are less than -8.3 dB and -9 dB, respectively. The measured power gain (S(21)) is 11 +/- 1.5 dB, and the measured minimum NF is 3.3 dB at 4 GHz. The dc power dissipation is 7.2 mW from a 1.2 V supply. The chip area, including testing pads, is 1.05 mm x 0.73 mm. |
URI: | http://dx.doi.org/10.1109/LMWC.2009.2032022 http://hdl.handle.net/11536/6504 |
ISSN: | 1531-1309 |
DOI: | 10.1109/LMWC.2009.2032022 |
期刊: | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS |
Volume: | 19 |
Issue: | 11 |
起始頁: | 737 |
結束頁: | 739 |
顯示於類別: | 期刊論文 |