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dc.contributor.authorLiou, Guan-Linen_US
dc.contributor.authorCheng, Chun-Huen_US
dc.contributor.authorChiu, Yu-Chienen_US
dc.date.accessioned2018-08-21T05:57:08Z-
dc.date.available2018-08-21T05:57:08Z-
dc.date.issued2017-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/147105-
dc.description.abstractIn this work, we investigated the photocapacitive effect of the metal-ferroelectric-insulator-semiconductor capacitors under illumination. The photocapacitive effect is mainly caused by light photon excitation, contributed from the variation of depletion charge. We suggested that the ferroelectric domains are affected by defect dipole charges formed by the interface trapped charges to lead to the variation of depletion capacitance.en_US
dc.language.isoen_USen_US
dc.subjectFerroelectricen_US
dc.subjectHafnium-Zirconateen_US
dc.subjectPhotocapacitive Effecten_US
dc.titlePhotocapacitive Effect of Ferroelectric Hafnium-Zirconate Capacitor Structureen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000426985900109en_US
Appears in Collections:Conferences Paper


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