標題: Solid Solubility Limited Dopant Activation of Group III Dopants (B, Ga & In) in Ge Targeting sub-7nm Node Low p plus Contact Resistance
作者: Borland, John
Lee, Yao-Jen
Chuang, Shang-Shiun
Tseng, Tseung-Yuen
Liu, Chee-Wee
Huet, Karim
Goodman, Gary
Marino, John
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2017
URI: http://hdl.handle.net/11536/147126
期刊: 2017 17TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT)
起始頁: 94
結束頁: 97
Appears in Collections:Conferences Paper