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dc.contributor.authorChen, Sung-Wen Huangen_US
dc.contributor.authorWang, Sheng-Wenen_US
dc.contributor.authorHong, Kuo-Binen_US
dc.contributor.authorTsai, Yu-Linen_US
dc.contributor.authorTzou, An-Jyeen_US
dc.contributor.authorChu, You-Chenen_US
dc.contributor.authorLee, Po-Tsungen_US
dc.contributor.authorLin, Chien-Chungen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2018-08-21T05:57:10Z-
dc.date.available2018-08-21T05:57:10Z-
dc.date.issued2017-01-01en_US
dc.identifier.issn2160-9020en_US
dc.identifier.urihttp://hdl.handle.net/11536/147146-
dc.description.abstractNano-ring light emitting diodes with different wall width shows that the effective bandgap can be tuned by reducing the strain. This research successful to make the devices with four colors emission on the same wafer.en_US
dc.language.isoen_USen_US
dc.titleWavelength Tuning in InGaN/GaN Light-emitting Diodes with Strain-induced Through Nanosphere Lithographyen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000427296202385en_US
Appears in Collections:Conferences Paper