Wavelength Tuning in InGaN/GaN Light-emitting Diodes with Strain-induced Through Nanosphere Lithography

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DC Field	Value	Language
dc.contributor.author	Chen, Sung-Wen Huang	en_US
dc.contributor.author	Wang, Sheng-Wen	en_US
dc.contributor.author	Hong, Kuo-Bin	en_US
dc.contributor.author	Tsai, Yu-Lin	en_US
dc.contributor.author	Tzou, An-Jye	en_US
dc.contributor.author	Chu, You-Chen	en_US
dc.contributor.author	Lee, Po-Tsung	en_US
dc.contributor.author	Lin, Chien-Chung	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.date.accessioned	2018-08-21T05:57:10Z	-
dc.date.available	2018-08-21T05:57:10Z	-
dc.date.issued	2017-01-01	en_US
dc.identifier.issn	2160-9020	en_US
dc.identifier.uri	http://hdl.handle.net/11536/147146	-
dc.description.abstract	Nano-ring light emitting diodes with different wall width shows that the effective bandgap can be tuned by reducing the strain. This research successful to make the devices with four colors emission on the same wafer.	en_US
dc.language.iso	en_US	en_US
dc.title	Wavelength Tuning in InGaN/GaN Light-emitting Diodes with Strain-induced Through Nanosphere Lithography	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)	en_US
dc.contributor.department	光電系統研究所	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Institute of Photonic System	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000427296202385	en_US
Appears in Collections:	Conferences Paper