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dc.contributor.authorChang, Tsu-Chien_US
dc.contributor.authorKuo, Shiou-Yien_US
dc.contributor.authorLian, Jhen-Tingen_US
dc.contributor.authorHong, Kuo-Binen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2018-08-21T05:57:11Z-
dc.date.available2018-08-21T05:57:11Z-
dc.date.issued2017-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/147163-
dc.description.abstractWe report on GaN-based vertical-cavity surface emitting lasers (VCSELs) capable of high temperature operation. The structures of VCSELs include double dielectric distributed Bragg reflectors and bonded to a silicon substrate with a p-side-down configuration, allowing a better heat dissipation. The temperature dependent lasing characteristics of VCSELs can sustain to 350K.en_US
dc.language.isoen_USen_US
dc.titleGaN-based vertical-cavity surface-emitting lasers operating at high temperatureen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 22ND MICROOPTICS CONFERENCE (MOC)en_US
dc.citation.spage110en_US
dc.citation.epage111en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000427705300046en_US
Appears in Collections:Conferences Paper


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