GaN-based vertical-cavity surface-emitting lasers operating at high temperature

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chang, Tsu-Chi	en_US
dc.contributor.author	Kuo, Shiou-Yi	en_US
dc.contributor.author	Lian, Jhen-Ting	en_US
dc.contributor.author	Hong, Kuo-Bin	en_US
dc.contributor.author	Lu, Tien-Chang	en_US
dc.contributor.author	Wang, Shing-Chung	en_US
dc.date.accessioned	2018-08-21T05:57:11Z	-
dc.date.available	2018-08-21T05:57:11Z	-
dc.date.issued	2017-01-01	en_US
dc.identifier.uri	http://hdl.handle.net/11536/147163	-
dc.description.abstract	We report on GaN-based vertical-cavity surface emitting lasers (VCSELs) capable of high temperature operation. The structures of VCSELs include double dielectric distributed Bragg reflectors and bonded to a silicon substrate with a p-side-down configuration, allowing a better heat dissipation. The temperature dependent lasing characteristics of VCSELs can sustain to 350K.	en_US
dc.language.iso	en_US	en_US
dc.title	GaN-based vertical-cavity surface-emitting lasers operating at high temperature	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2017 22ND MICROOPTICS CONFERENCE (MOC)	en_US
dc.citation.spage	110	en_US
dc.citation.epage	111	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000427705300046	en_US
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